Semiconductor device and manufacturing method thereof

ABSTRACT

An insulation film ( 24 ) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor ( 23 ) is formed. Thereafter, an alumina film ( 25 ) is formed on the insulation film ( 24 ). According to the method, low coverage of the alumina film ( 25 ) does not become a problem, and the ferroelectric capacitor ( 23 ) is reliably protected.

TECHNICAL FIELD

The present invention relates to a semiconductor device enhanced inendurance against permeation of hydrogen and water from outside and amanufacturing method thereof.

BACKGROUND ART

A wiring rule in a ferroelectric memory (FeRAM) is 0.35 μm recently, andin formation of an interlayer insulation film, a plasma CVD method ismainly adopted.

In order to prevent hydrogen diffusion into a ferroelectric capacitor,an alumina film directly covering the ferroelectric capacitor is formedas a hydrogen diffusion prevention film in a ferroelectric memory.

However, miniaturization is also highly demanded of a ferroelectricmemory recently, and with miniaturization, the specifications of theferroelectric capacitor and wiring become rigid. Meanwhile, coverage ofan alumina film is comparatively low. For the above reasons, it cannotbe said that protection of the ferroelectric capacitor is sufficient,and deterioration of the ferroelectric capacitor becomes a problem.

Concerning an interlayer insulation film, a gap is sometimes generatedin the interlayer insulation film between a ferroelectric capacitor andwiring or the like when a multilayered wiring structure is formed.Therefore, high reliability is difficult to obtain.

Further, high moisture endurance is the characteristic which is requiredin not only a ferroelectric memory but also most semiconductor devices.

Therefore, in a multilayered wiring structure, the one provided with anSiN film between two wiring layers is also proposed. However, such astructure does not have sufficient moisture resistance.

Patent Document 1

Japanese Patent Application Laid-open No. 2001-36026

Patent Document 2

Japanese Patent Application Laid-open No. 2001-15703

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor devicewhich can suppress deterioration of a semiconductor element such as aferroelectric capacitor, and a manufacturing method thereof.

In a first semiconductor device according to the present invention, asemiconductor substrate, a ferroelectric capacitor formed above thesemiconductor substrate, and an insulation film directly covering theferroelectric capacitor and having an inclination of its surface moregradual than an inclination of a surface of the ferroelectric capacitorare provided. A hydrogen diffusion prevention film preventing diffusionof hydrogen to the ferroelectric capacitor is formed on the insulationfilm.

In a second semiconductor device according to the present invention, asemiconductor substrate, a semiconductor element formed on thesemiconductor substrate, a pad formed above the semiconductor substrateand connected to the semiconductor element, and one wiring layer, or twoor more wiring layers formed between the semiconductor element and thepad are provided. A water permeation prevention film preventingpermeation of water to a lower layer side is formed between an uppermostwiring layer located at an uppermost position of the one wiring layer ortwo or more wiring layers and the pad.

In a first manufacturing method of a semiconductor device according tothe present invention, after a ferroelectric capacitor is formed above asemiconductor substrate, an insulation film directly covering theferroelectric capacitor and having an inclination of its surface moregradual than an inclination of a surface of the ferroelectric capacitoris formed. A hydrogen diffusion prevention film preventing diffusion ofhydrogen to the ferroelectric capacitor is formed on the insulationfilm.

In a second manufacturing method of a semiconductor device according tothe present invention, after a semiconductor element is formed on asemiconductor substrate, one wiring layer, or two or more wiring layersis or are formed above the semiconductor element. Next, a waterpermeation prevention film preventing permeation of water to a lowerlayer side is formed above an uppermost wiring layer located at anuppermost position of the one wiring layer or two or more wiring layers.A pad connected to the semiconductor element is formed above the waterpermeation prevention film.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing a structure of a memory cell arrayof a ferroelectric memory manufactured according to embodiments of thepresent invention;

FIGS. 2A to 2G are sectional views of a manufacturing method of aferroelectric memory according to a first embodiment of the presentinvention in sequence of process steps; and

FIGS. 3A to 3E are sectional views showing a manufacturing method of aferroelectric memory according to a second embodiment of the presentinvention in sequence of process steps.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be explained inconcrete with reference to the attached drawings. FIG. 1 is a circuitdiagram showing a structure of a memory cell array of a ferroelectricmemory (semiconductor device) which is manufactured by a methodaccording to the embodiments of the present invention.

This memory cell array is provided with a plurality of bit lines 3extending in one direction, plurality of word lines 4 and plate lines 5extending in the perpendicular direction to the direction in which thebit lines 3 extend. A plurality of memory cells of the ferroelectricmemory according to the embodiments are disposed in an array form tomatch a grid constituted by these bit lines 3, word lines 4 and platelines 5. Each memory cell is provided with a ferroelectric capacitor 1and a MOS transistor 2.

A gate of the MOS transistor 2 is connected to the word line 4. Onesource/drain of the MOS transistor 2 is connected to the bit line 3, andthe other source/drain is connected to one electrode of theferroelectric capacitor 1. The other electrode of the ferroelectriccapacitor 1 is connected to the plate line 5. Each of the word lines 4and the plate lines 5 is shared by a plurality of MOS transistors 2arranged in the same direction as the direction in which they extend.Similarly, each of the bit lines 3 is shared by a plurality of MOStransistors 2 arranged in the same direction as the direction in whichit extends. The direction in which the word line 4 and the plate line 5extend is sometimes called the row direction, and the direction in whichthe bit line 3 extends is sometimes called the column line.

In the memory cell array of the ferroelectric memory thus constituted,data is stored in accordance with the polarization state of theferroelectric film provided on the ferroelectric capacitor 1.

First Embodiment

Next, a first embodiment of the present invention will be explained.Here, a structure of each memory cell is explained with itsmanufacturing method for convenience. FIGS. 2A to 2G are sectional viewswhich show a manufacturing method of a ferroelectric memory(semiconductor device) according to the first embodiment of the presentinvention in sequence of process steps. In FIGS. 2A o 2G, the partcorresponding to two MOS transistors sharing one bit line (correspondingto the bit line 3 in FIG. 1) is shown.

In the first embodiment, a well 12 is formed on a surface of asemiconductor substrate 11 of the silicon substrate or the like first asshown in FIG. 2A. Next, an element isolation region 13 is formed on thesurface of the semiconductor substrate 11 by STI (Shallow TrenchIsolation), for example. Subsequently, gate insulation films 14, gateelectrodes 15, cap films 16, side walls 17, source/drain diffusionlayers 18 and silicide layers 19 are formed on the surface of the well12, and thereby, MOS transistors 2 are formed as switching elements. TheMOS transistor 20 corresponds to the MOS transistor 2 in FIG. 1. Twosource/drain diffusion layers 18 are formed for source and drain in eachof the MOS transistors 20, and one of them is shared by two MOStransistors 20.

Next, a silicon oxynitride film 21 is formed on the entire surface tocover the MOS transistor 20, and an SiO₂ film 22 is further formed onthe entire surface as an interlayer insulation film, and the SiO₂ film22 is flattened by CMP (Chemical Mechanical Polishing) or the like. Thesilicon oxynitride film 21 is formed to prevent water deterioration ofthe gate insulation film 14 or the like on forming the SiO₂ film 22.

Thereafter, as shown in FIG. 2B, a ferroelectric capacitor 23 of aplanar structure is formed on the SiO₂ film 22. The ferroelectriccapacitor 23 is composed of a bottom electrode 23 a, a ferroelectricfilm 23 b and a top electrode 23 c which are layered in sequence. Theferroelectric capacitor 23 corresponds to the ferroelectric capacitor 1in FIG. 1.

Subsequently, as shown in FIG. 2C, an insulation film 24 having aninclination of its surface more gradual than the inclination of thesurface of the ferroelectric capacitor 23 is formed. As the insulationfilm 24, an SiO₂ film doped with no impurity (NSG (Non-doped SilicateGlass) film), an SiO₂ film doped with P (PSG (Phospho-Silicate Glass)film), an SiO₂ film doped with B and P (BPSG (Boron Phospho-SilicateGlass) film), an SiO₂ film doped with F (FSG (Fluoro-Silicate Glass)film) and the like may be formed, by an atmospheric-pressure CVD methodwith TEOS (Tetra-Ethyl Ortho-Silicate) and O₃ being used, for example.As the insulation film 24, an NSG film, a PSG film, a BPSG film, an FSGfilm, SiON film and the like may be formed by a high density plasma(HDP: High Density Plasma) CVD method, for example. Further, as theinsulation film 24, an SiO₂ film, SiON film and the like may be formedby a plasma CVD method.

It should be noted that, when the insulation film 24 is formed by theatmospheric pressure CVD method or the plasma CVD method, it ispreferable to reduce water in the insulation film 24 and improve thefilm quality of the insulation film 24 by performing plasma treatmentusing plasma of N₂ or N₂O for the insulation film 24. It is preferableto set the treatment temperature at this time at 200° C. to 450° C.

When the insulation film 24 is formed by the atmospheric pressure CVDmethod, it is preferable to form an SiO₂ film or an SiON film of about300 Å to 1000 Å by a plasma CVD method. This is for enhancement ofcoverage and prevention of permeation of water into the ferroelectriccapacitor 23.

Further, it is preferable to set the temperature of the semiconductorsubstrate 11 at the time of film forming at 175° C. to 350° C. This isbecause there is a possibility that the coverage becomes low if thetemperature is lower than 175° C. and there is a possibility that theferroelectric capacitor 23 already formed is broken if the temperatureexceeds 350° C.

Next, as shown in FIG. 2D, an alumina film (aluminum oxide film) 25 isformed on the insulation film 24 as a hydrogen diffusion preventionfilm. Since steep portions exist on side surfaces or the like of theferroelectric capacitor 23, insufficient coverage occurs when thealumina film is formed to directly cover the ferroelectric capacitor 23,but in this embodiment, low coverage of the alumina film 25 does notmatter, because the insulation film 24 is formed and the inclination ofits surface is gradual.

Next, as shown in FIG. 2E, an Si oxide film 26 is formed on the entiresurface as an interlayer insulation film, and flattening of the Si oxidefilm 26 is performed by CMP or the like.

Thereafter, as shown in FIG. 2F, a contact hole which reaches each ofthe silicide layers 19 is formed in the Si oxide film 26, the aluminafilm 25, the insulation film 24, the SiO₂ film 22 and the siliconoxynitride film 21, and thereby, a plug contact part is opened, withpatterning and etching techniques used. Subsequently, a barrier metalfilm (not shown) is formed in each contact hole, and a W film is buriedin an inside thereof by a CVD method, for example, and the W film isflattened by performing CMP, whereby W plugs 27 and 28 are formed. The Wplug 28 is one connected to the silicide layer 19 shared by the two MOStransistors 20, and the W plug 27 is another one connected to theremaining silicide layer 19.

Next, as shown in FIG. 2G, contact holes which reach the top electrodes23 c are formed in the Si oxynitride film 26, the alumina film 25 andthe insulation film 24, with patterning and etching techniques used.Subsequently, wirings 29 which connect the top electrodes 23 c and the Wplugs 27 via the contact holes and a wiring 30 which is connected to theW plug 28 is formed, on the Si oxide film 26.

It is preferable to perform annealing at 400° C. to 600° C. for theferroelectric capacitor 23 in oxygen atmosphere, nitrogen atmosphere, orthe atmosphere of the mixture gas of them, before formation of thewirings 29 and 30. By performing such annealing, the characteristic ofthe ferroelectric capacitor 23 which is deteriorated in the processsteps so far is recovered.

Thereafter, formation of interlayer insulation films, formation ofcontact plugs, formation of wirings from the second layer onward and thelike are performed. Subsequently, a passivation film composed of asilicon oxide film and an Si₃N₄ film, for example, is formed, andthereby, a ferroelectric memory having a ferroelectric capacitor iscompleted. On forming the upper wiring, a wiring (not shown) connectedto the bottom electrode 23 a is connected to the plate line(corresponding to the plate line 5 in FIG. 1), and the wiring 29 isconnected to the bit line (corresponding to the bit line 3 in FIG. 1).As for the gate electrode 15, the gate electrode 15 itself may be madethe word line, and the gate electrode 15 may be connected to the wordline in the upper wiring.

According to the first embodiment, coverage of the alumina film 25 doesnot become a problem, and therefore, permeation of hydrogen into theferroelectric capacitor 23 can be reliably prevented. Namely, it becomespossible to reliably protect the ferroelectric capacitor 23.

Especially when a silicon oxynitride film is formed by a high densityplasma CVD method as the insulation film 24, this insulation film 24also functions as the water permeation prevention film, and therefore,the ferroelectric capacitor 23 can be protected more firmly.

It is preferable that the thickness of the hydrogen diffusion preventingfilm is 10 nm to 100 nm. This is because if the thickness is less than10 nm, there is a possibility that diffusion of hydrogen cannot beprevented sufficiently, and if the thickness exceeds 100 nm, etching ofthe hydrogen diffusion preventing film becomes difficult.

As a hydrogen diffusion preventing film, an Al oxynitride film, a Taoxide film, a Ti oxide film and the like may be formed other than thealumina film.

Second Embodiment

Next, a second embodiment of the present invention will be explained.Here, a structure of a semiconductor device will be explained with itsmanufacturing method for convenience. FIGS. 3A to 3E are sectional viewsshowing a manufacturing method of a ferroelectric memory (semiconductordevice) according to the second embodiment of the present invention insequence of the process steps.

In the second embodiment, after a semiconductor element (not shown) andthe like are formed on a semiconductor substrate (not shown) as in thefirst embodiment, an interlayer insulation film 31 is formed above thesemiconductor substrate as shown in FIG. 3A.

Next, a raw material film of a bottom electrode (bottom electrode film),a ferroelectric film and a raw material film of a top electrode (topelectrode film) are sequentially deposited on the interlayer insulationfilm 31, and by patterning the top electrode film and the ferroelectricfilm, a top electrode 34 and a ferroelectric capacity insulation film 33are formed. Next, an alumina film 35 is formed on an entire surface, andthe alumina film 35 and the bottom electrode film are patterned, wherebya bottom electrode 32 is formed. Subsequently, an alumina film 36 isformed on the entire surface. The thickness of the alumina films 35 and36 are, for example, about 50 nm and 20 nm respectively.

Thereafter, an interlayer insulation film 37 is formed on the entiresurface, and a contact hole is formed in the interlayer insulation film37, the alumina film 36 and the interlayer insulation film 31, and a Wplug 38 is buried in the contact hole. Further, contact holes whichrespectively reach the top electrode 34 and the bottom electrode 32 areformed in the interlayer insulation film 37, the alumina film 36 and thealumina film 35. Then, an Al wiring 39 connected to the top electrode34, an Al wiring 40 connected to the bottom electrode 32, and an Alwiring 41 connected to the W plug 38 are formed on the interlayerinsulation film 37. Subsequently, an alumina film 42 of the thickness ofabout 20 nm is formed on the entire surface, and an interlayerinsulation film 43 is formed thereon.

Next, a contact hole which reaches the Al wiring 41 and the like isformed in the interlayer insulation film 43 and the alumina film 42, anda W plug 44 is buried in this contact hole. Next, an Al wiring 45 isformed on the interlayer insulation film 43.

Thereafter, as shown in FIG. 3B, an SiO₂ film 46 of the thickness ofabout 2.2 μm is formed by a plasma CVD method with TEOS as a rawmaterial. Subsequently, the SiO₂ film 46 is flattened by being polisheduntil it has the thickness of about 1.0 μm by CMP. Thereafter, plasmatreatment using N₂O is performed for the SiO₂ film 46, and thereby,water existing in the SiO₂ film 46 is reduced.

Subsequently, as shown in FIG. 3C, an SiO₂ film 47 of the thickness ofabout 100 nm is formed on the entire surface by a plasma CVD method withTEOS as a raw material. Then, plasma treatment using N₂O is performedfor the SiO₂ film 47, and thereby, water existing in the SiO₂ film 47 isreduced. Next, an alumina film 48 is formed on the SiO₂ film 47 as awater permeation prevention film, and an SiO₂ film 49 of the thicknessof about 100 nm is formed on the alumina film 48 with TEOS as a rawmaterial by a plasma CVD method. Then, plasma treatment using N₂O isperformed for the SiO₂ film 49, and thereby, water existing in the SiO₂film 49 is reduced. Then, a contact hole which reaches the Al wiring 45is formed, and a W plug 50 is buried in this contact hole. The thicknessof the alumina film 48 is about 50 nm, for example.

When the SiO₂ film 46 is formed by an HDP (High Density Plasma) CVDmethod, and a void (pore) does not occur in the SiO₂ film 46, after N₂Oplasma treatment is performed as necessary after flattening by CMP, andthe alumina film 48 may be directly formed on the SiO₂ film 46 withoutforming the SiO₂ film 47.

Next, as shown in FIG. 3D, an Al wiring 51 is formed on the SiO₂ film49. At this time, as shown in FIG. 3E, a pad 54 for wire-bonding isformed at the same layer as the Al wiring 51. Namely, an Al film isformed on the SiO₂ film 49, and by patterning this, the Al wiring 51 andthe pad 54 are formed from the same Al film.

Thereafter, as shown in FIGS. 3D and 3E, a high density plasma SiO₂ film52 and Si₃N₄ film 53 are sequentially formed on the entire surface as apassivation film. Then, an opening for exposing a part of the pad 54 isformed in the high density plasma SiO₂ film 52 and Si₃N₄ film 53.

According to the second embodiment, permeation of water into thesemiconductor element (ferroelectric capacitor and the like) can beprevented more reliably. Namely, when a water permeation prevention filmis formed to cover the ferroelectric capacitor, wiring and the like,there is a possibility that water permeates onto the water permeationprevention film and water concentrates thereon and thereafter, the waterpermeates into the semiconductor element, but if the water permeationprevention film (alumina film 48) is formed between the pad 54 and thewiring layer on the uppermost layer as in this embodiment, water hardlyreaches the semiconductor element, and therefore, water permeation canbe prevented more reliably.

The alumina film 48 used as the water permeation prevention film in thesecond embodiment also has a function of preventing diffusion ofhydrogen. Therefore, it is also possible to suppress deterioration ofthe ferroelectric capacitor by hydrogen. Accordingly, it is preferableto use the water permeation prevention film which not only can preventpermeation of water but also can prevent diffusion of hydrogen, as thewater permeation prevention film.

Here, the result of the moisture resistance test which the inventors ofthe present application actually made will be explained. In thismoisture resistance test, the produced semiconductor devices were placedunder the conditions of the predetermined temperature and humidity, andit was examined whether the semiconductor devices normally operated 72hours later, 168 hours later and 336 hours later. The results are shownin Table 1 to Table 3. In example 1, the alumina film was formed as thewater permeation prevention film between the uppermost wiring layer(wiring layer located at the uppermost position) and the pad as in thesecond embodiment. On the other hand, in the comparative example 2, suchan alumina film as in example 1 was not formed. The denominators of “thenumber of failures” in Table 1 to Table 3 are the total numbers ofspecimens used in measurement, and the numerators are the total numbersof the specimens which were determined as fail because they did notoperate normally. As shown in Table 1 to Table 3, example 1 according tothe second embodiment was extremely excellent in moisture resistance fora long period of time.

After an insulation film is formed by a high density plasma CVD methodso as to cover a wiring layer on the uppermost layer, a water permeationprevention film may be formed thereon.

It is preferable that the thickness of a water permeation preventionfilm is 10 nm to 100 nm. This is because if the thickness is less than10 nm, permeation of water cannot be sufficiently prevented, and if thethickness exceeds 100 nm, it becomes difficult to etch the waterpermeation prevention film.

Further, as a water permeation prevention film, a silicon nitride film,a silicon oxynitride film, a tantalum oxide film, a titanium oxide filmand the like may be formed other than an alumina film.

A pad is not limited to the use for wire-bonding, and a bump may beformed on, for example, the pad.

In any of the first and the second embodiments, a forming method of thealumina film is not specially limited. For example, the alumina film maybe formed by a physical vapor deposition method, or an MOCVD method, orthe alumina film may be formed with hydrolysis expressed by thefollowing chemical formula.

-Chemical Formula-2AlCl₃+3H₂O→Al₂O₃+6HCl ↑

In formation of a passivation film, it is preferable to form a siliconoxide film under an Si₃N₄ film by a high density plasma CVD method, orit is preferable to form two silicon oxide films by a high densityplasma CVD method, to form a hydrogen diffusion prevention filmtherebetween and to form an Si₃N₄ film on the upper silicon oxide film.A TEOS oxide film may be used as the silicon oxide film under the Si₃N₄film.

Further, a wiring material is not limited to Al. For example, Cu wiringor Al—Cu alloy wiring may be used. In formation of the contact plug, itis preferable to form a barrier metal film composed of a TiN film and aTi film sequentially formed, or a barrier metal film composed of only aTiN film in a contact hole before the W plug is buried.

As a capacity insulation film (ferroelectric film) of a ferroelectriccapacitor, for example, a PZT (Pb (Zr, Ti) O₃) film, a SBT (SrBi₂Ta₂O₉)film, or the like can be used. The methods for forming these films arenot specially limited, and, they can be formed by, for example, an MOCVDmethod.

Both effects can be obtained by applying the first embodiment and thesecond embodiment at the same time.

INDUSTRIAL APPLICABILITY

As explained in detail thus far, according to the present invention,permeation of hydrogen or water can be prevented more reliably by thehydrogen diffusion prevention film or the water permeation preventionfilm. Therefore, reliability is enhanced, and yield and productivity areincreased. TABLE 1 72 HOURS LATER NUMBER OF FAILURES FAILURE RATE (%)EXAMPLE 1 0/20 0.0 COMPARATIVE 0/20 0.0 EXAMPLE 2

TABLE 2 168 HOURS LATER NUMBER OF FAILURES FAILURE RATE (%) EXAMPLE 10/20 0.0 COMPARATIVE 0/20 0.0 EXAMPLE 2

TABLE 3 336 HOURS LATER NUMBER OF FAILURES FAILURE RATE (%) EXAMPLE 10/20 0.0 COMPARATIVE 8/20 40.0 EXAMPLE 2

1. A semiconductor device, comprising: a semiconductor substrate; aferroelectric capacitor formed above said semiconductor substrate; aninsulation film directly covering said ferroelectric capacitor andhaving an inclination of its surface more gradual than an inclination ofa surface of said ferroelectric capacitor; and a hydrogen diffusionprevention film formed on said insulation film and preventing diffusionof hydrogen to said ferroelectric capacitor.
 2. The semiconductor deviceaccording to claim 1, wherein said insulation film is formed by a highdensity plasma CVD method.
 3. The semiconductor device according toclaim 1, wherein said insulation film is one selected from a groupconsisting of a silicon oxide film doped with no impurity, a siliconoxynitride film, a silicon oxide film doped with fluorine, a siliconoxide film doped with phosphorus and a silicon oxide film doped withboron and phosphorus.
 4. The semiconductor device according to claim 1,wherein said hydrogen diffusion prevention film is one selected from agroup consisting of an aluminum oxide film, an aluminum oxynitride film,a tantalum oxide film and a titanium oxide film.
 5. The semiconductordevice according to claim 1, wherein thickness of said hydrogendiffusion prevention film is 10 nm to 100 nm.
 6. The semiconductordevice according to claim 1, further comprising: a semiconductor elementformed on said semiconductor substrate; a pad formed above saidsemiconductor substrate and connected to said semiconductor element; onewiring layer or two or more wiring layers formed between saidsemiconductor element and said pad; and a water permeation preventionfilm formed between an uppermost wiring layer located at an uppermostposition of said one wiring layer or two or more wiring layers, andpreventing permeation of water to a lower layer side thereof.
 7. Thesemiconductor device according to claim 6, wherein said water permeationprevention film is one selected from a group consisting of an aluminumoxide film, a silicon nitride film and a silicon oxynitride film.
 8. Asemiconductor device, comprising: a semiconductor substrate; asemiconductor element formed on said semiconductor substrate; a padformed above said semiconductor substrate and connected to saidsemiconductor element; one wiring layer or two or more wiring layersformed between said semiconductor element and said pad; and a waterpermeation prevention film formed between an uppermost wiring layerlocated at an uppermost position of said one wiring layer or two or morewiring layers, and preventing permeation of water to a lower layer sidethereof.
 9. The semiconductor device according to claim 8, furthercomprising an insulation film formed to cover said uppermost wiringlayer by a high density plasma CVD method.
 10. The semiconductor deviceaccording to claim 8, wherein said water permeation prevention film isone selected from a group consisting of an aluminum oxide film, asilicon nitride film and a silicon oxynitride film.
 11. Thesemiconductor device according to claim 8, wherein thickness of saidwater permeation prevention film is 10 nm to 100 nm.
 12. Thesemiconductor device according to claim 8, further comprising aferroelectric capacitor formed at any layer between said semiconductorsubstrate and said uppermost wiring layer.
 13. A manufacturing method ofa semiconductor device, comprising the steps of: forming a ferroelectriccapacitor above a semiconductor substrate; forming an insulation filmdirectly covering the ferroelectric capacitor and having an inclinationof its surface more gradual than an inclination of a surface of theferroelectric capacitor; and forming a hydrogen diffusion preventionfilm preventing diffusion of hydrogen to the ferroelectric capacitor onthe insulation film.
 14. The manufacturing method of the semiconductordevice according to claim 13, wherein the insulation film is formed by ahigh density plasma CVD method.
 15. The manufacturing method of thesemiconductor device according to claim 14, wherein temperature of thesemiconductor substrate on forming the insulation film is set at 175° C.to 350° C.
 16. The manufacturing method of the semiconductor deviceaccording to claim 13, wherein one selected from a group consisting of asilicon oxide film doped with no impurity, a silicon oxynitride film, asilicon oxide film doped with fluorine, a silicon oxide film doped withphosphorus, and a silicon oxide film doped with boron and phosphorus isformed as the insulation film.
 17. The manufacturing method of thesemiconductor device according to claim 13, wherein one selected from agroup consisting of an aluminum oxide film, an aluminum oxynitride film,a tantalum oxide film and a titanium oxide film is formed as thehydrogen diffusion prevention film.
 18. The manufacturing method of thesemiconductor device according to claim 13, wherein thickness of thehydrogen diffusion prevention film is made 10 nm to 100 nm.
 19. Themanufacturing method of the semiconductor device according to claim 13,wherein the insulation film is formed by an atmospheric pressure CVDmethod or a plasma CVD method with tetra-ethyl ortho-silicate as a rawmaterial.
 20. The manufacturing method of a semiconductor deviceaccording to claim 19, further comprising the step of performing plasmatreatment using plasma of N₂ (nitrogen) or N₂O (dinitrogen monoxide) forthe insulation film, after said step of forming the insulation film. 21.The manufacturing method of the semiconductor device according to claim20, wherein in said step of performing the plasma treatment, temperatureof an inside of a treatment chamber is set at 200° C. to 450° C.
 22. Themanufacturing method of the semiconductor device according to claim 17,wherein the aluminum oxide film is formed by a physical vapor depositionmethod, an MOCVD method or a hydrolysis method.
 23. The manufacturingmethod of the semiconductor device according to claim 22, wherein asilicon oxide film or a silicon oxynitride film by a high density plasmaCVD method or a plasma CVD method.
 24. The manufacturing method of thesemiconductor device according to claim 13, wherein said step of formingthe insulation film comprises the steps of: forming a silicon oxide filmor a silicon oxynitride film by a plasma CVD method, and forming asilicon oxide film doped with no impurity is formed by an atmosphericpressure CVD method with tetra-ethyl ortho-silicate as a raw material.25. The manufacturing method of the semiconductor device according toclaim 13, further comprising the step of forming a semiconductor elementon the semiconductor substrate before said step of forming theferroelectric capacitor, and further comprising the steps of, after saidstep of forming the hydrogen diffusion prevention film: forming onewiring layer or two or more wiring layers above the ferroelectriccapacitor; forming a water permeation prevention film preventingpermeation of water to a lower layer side above an uppermost wiringlayer located at an uppermost position of the one wiring layer or two ormore wiring layers; and forming a pad connected to the semiconductorelement above the water permeation prevention film.
 26. Themanufacturing method of the semiconductor device according to claim 25,wherein one selected from a group consisting of an aluminum oxide film,a silicon nitride film and a silicon oxynitride film is formed as thewater permeation prevention film.
 27. The manufacturing method of thesemiconductor device according to claim 13, further comprising the stepsof, after said step of forming the hydrogen diffusion prevention film:forming an interlayer insulation film on the hydrogen diffusionprevention film; flattening the interlayer insulation film; forming acontact hole reaching a part of the ferroelectric capacitor in theinterlayer insulation film, the hydrogen diffusion prevention film andthe insulation film; performing annealing at 400° C. to 600° C. inatmosphere containing at least one kind of gas selected from a groupconsisting of oxygen and nitrogen for the ferroelectric capacitor; andforming a wiring connected to the ferroelectric capacitor via thecontact hole.
 28. A manufacturing method of a semiconductor device,comprising the steps of: forming a semiconductor element on asemiconductor substrate; forming one wiring layer or two or more wiringlayers above the semiconductor element; forming a water permeationprevention film preventing permeation of water to a lower layer sideabove an uppermost wiring layer located at an uppermost position of theone wiring layer or two or more wiring layers; and forming a padconnected to the semiconductor element above the water permeationprevention film.
 29. The manufacturing method of the semiconductordevice according to claim 28, further comprising the step of forming aninsulation film covering the uppermost wiring layer by a high densityplasma CVD method, before said step of forming the water permeationprevention film.
 30. The manufacturing method of the semiconductordevice according to claim 28, wherein one selected from a groupconsisting of an aluminum oxide film, a silicon nitride film and asilicon oxynitride film is formed, as the water permeation preventionfilm.
 31. The manufacturing method of the semiconductor device accordingto claim 28, wherein thickness of the water permeation prevention filmis made 10 nm to 100 nm.
 32. The manufacturing method of thesemiconductor device according to claim 28, further comprising the stepof forming an insulation film covering the uppermost wiring layer by aplasma CVD method with tetra-ethyl ortho-silicate as a raw material,before said step of forming the water permeation prevention film. 33.The manufacturing method of a semiconductor device according to claim28, further comprising the steps of, before said step of forming thewater permeation prevention film: forming a first insulation filmcovering the uppermost wiring layer by a plasma CVD method withtetra-ethyl ortho-silicate as a raw material; flattening the firstinsulation film; performing plasma treatment using plasma of N₂O(dinitrogen monoxide) for the first insulation film; forming a secondinsulation film on the first insulation film by a plasma CVD method withtetra-ethyl ortho-silicate as a raw material; and performing plasmatreatment using plasma of N₂O (dinitrogen monoxide) for the secondinsulation film, and further comprising the steps of, before said stepof forming the pad: forming a third insulation film on the waterpermeation prevention film by a plasma CVD method with tetra-ethylortho-silicate as a raw material; and performing plasma treatment usingplasma of N₂O (dinitrogen monoxide) for the third insulation film. 34.The manufacturing method of the semiconductor device according to claim28, further comprising the step of forming a ferroelectric capacitorabove the semiconductor substrate in parallel with said step of formingthe one wiring layer or two or more wiring layers above thesemiconductor element.